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VS-MBR1035-M3, VS-MBR1045-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 10 A
Base cathode
2
2L TO-220AC
13 Cathode Anode
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF IRM max. TJ max. EAS Package
10 A 35 V, 45 V
0.57 V 15 mA at 125 °C
150 °C 8 mJ 2L TO-220AC
Circuit configuration
Single
FEATURES
• 150 °C TJ operation • High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance please see www.vishay.