Datasheet4U Logo Datasheet4U.com

VS-MBR1035-M3 - High Performance Schottky Rectifier

General Description

This Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Key Features

  • 150 °C TJ operation.
  • High frequency operation.
  • Low forward voltage drop.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet Details

Part number VS-MBR1035-M3
Manufacturer Vishay
File Size 149.18 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-MBR1035-M3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com VS-MBR1035-M3, VS-MBR1045-M3 Vishay Semiconductors High Performance Schottky Rectifier, 10 A Base cathode 2 2L TO-220AC 13 Cathode Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max. TJ max. EAS Package 10 A 35 V, 45 V 0.57 V 15 mA at 125 °C 150 °C 8 mJ 2L TO-220AC Circuit configuration Single FEATURES • 150 °C TJ operation • High frequency operation • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.