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VS-MBR2045CT-1-M3 - High Performance Schottky Rectifier

Download the VS-MBR2045CT-1-M3 datasheet PDF. This datasheet also covers the VS-MBRB2035CT-M3 variant, as both devices belong to the same high performance schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (VS-MBRB2035CT-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

General Description

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Overview

www.vishay.com VS-MBRB20..CT-M3, VS-MBR20..CT-1-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A 2 1 3 1 2 D2PAK (TO-263AB) 3 Base common cathode 2 TO-262AA Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-MBRB20..CT-M3 2 1 Common 3 Anode cathode Anode VS-MBR20..CT-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR 2 x 10 A 35 V, 45 V VF at IF IRM max.

TJ max.

0.

Key Features

  • 150 °C TJ operation.
  • Center tap D2PAK (TO-263AB) and TO-262AA packages.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material ca.

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