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VS-MBR2535CT-1-M3 - High Performance Schottky Rectifier

Download the VS-MBR2535CT-1-M3 datasheet PDF (VS-MBRB2535CT-M3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high performance schottky rectifier.

Description

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Features

  • 150 °C TJ operation.
  • Center tap D2PAK (TO-263AB) and TO-262AA packages.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material ca.

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Note: The manufacturer provides a single datasheet file (VS-MBRB2535CT-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.vishay.com VS-MBRB25..CT-M3, VS-MBR25..CT-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A 2 1 3 1 2 D2PAK (TO-263AB) 3 Base common cathode 2 TO-262AA Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-MBRB25..CT-M3 2 1 Common 3 Anode cathode Anode VS-MBR25..CT-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max. TJ max.
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