Datasheet Summary
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VS-MBRB1035-M3, VS-MBRB1045-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 10 A
Base cathode
2 1
3 D2PAK (TO-263AB)
1 N/C
3 Anode
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF IRM TJ max. EAS Package
10 A 35 V, 45 V
0.57 V 15 mA at 125 °C
150 °C 8 mJ D2PAK (TO-263AB)
Circuit configuration
Single
Features
- 150 °C TJ operation
- TO-220 and D2PAK packages
- Low forward voltage drop
- High frequency operation
- High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- Guard ring for enhanced ruggedness and long term reliability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Designed...