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VS-MBRB3030CTL-M3 - High Performance Schottky Rectifier

General Description

This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage.

Key Features

  • 150 °C TJ operation.
  • Center tap configuration.
  • Very low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: For de.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-MBRB3030CTL-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A Base common cathode 2 D2PAK PRODUCT SUMMARY IF(AV) VR VF at IF IRM TJ max. EAS Package Diode variation 2 Common cathode 13 Anode Anode 12 2 x 15 A 30 V 0.