Download the VS-ST330S12PbF datasheet PDF.
This datasheet also covers the VS-ST330SPbF variant, as both devices belong to the same phase control thyristors family and are provided as variant models within a single manufacturer datasheet.
Key Features
Center amplifying gate.
International standard case TO-118 (TO-209AE).
Hermetic metal case with ceramic insulator.
Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling.
Designed and qualified for industrial level.
Material categorization: for definitions of compliance
please see www. vishay. com/doc?99912.
Full PDF Text Transcription for VS-ST330S12PbF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
VS-ST330S12PbF. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com VS-ST330SPbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 330 A TO-118 (TO- 209AE) PRIMARY CHARACTERISTICS IT(AV) VDRM/VRRM 330 A ...
View more extracted text
0 A TO-118 (TO- 209AE) PRIMARY CHARACTERISTICS IT(AV) VDRM/VRRM 330 A 400 V, 800 V, 1200 V, 1400 V, 1600 V, 2000 V VTM IGT TJ Package 1.52 V 200 mA -40 °C to +125 °C TO-118 (TO-209AE) Circuit configuration Single SCR FEATURES • Center amplifying gate • International standard case TO-118 (TO-209AE) • Hermetic metal case with ceramic insulator • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.
VS-ST330S12PbF Datasheet
