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VSMA1085600X02 - High Power Infrared Emitting Diode

Datasheet Summary

Description

As part of the Astral portfolio, the VSMA1085600X02 is an infrared, 850 nm emitting diode.

Features

  • a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A.

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Datasheet preview – VSMA1085600X02

Datasheet Details

Part number VSMA1085600X02
Manufacturer Vishay
File Size 199.49 KB
Description High Power Infrared Emitting Diode
Datasheet download datasheet VSMA1085600X02 Datasheet
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Full PDF Text Transcription

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www.vishay.com VSMA1085600X02 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology LINKS TO ADDITIONAL RESOURCES Application Notes 3D 3D 3D Models DESCRIPTION As part of the Astral portfolio, the VSMA1085600X02 is an infrared, 850 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES • Package type: surface-mount • Package form: high power SMD with lens • Dimensions (L x W x H in mm): 3.4 x 3.4 x 1.8 • Peak wavelength: λp = 850 nm • AEC-Q102 qualified • Angle of half intensity: ϕ = ± 60° • Designed for high drive currents: up to 1.
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