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VSMB10940 - High Speed Infrared Emitting Diode

General Description

VSMB10940 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD).

Key Features

  • Package type: Surface mount.
  • Package form: Side view.
  • Dimensions (L x W x H in mm): 3 x 2 x 1.
  • Peak wavelength:.
  • p = 940 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • High speed.
  • Angle of half sensitivity:  = ± 75°.
  • Low forward voltage.
  • Package matches with detector VEMD10940F.
  • Floor life: 168 h, MSL 3, acc. J-STD-020.
  • Lead (Pb)-free reflow soldering.

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Datasheet Details

Part number VSMB10940
Manufacturer Vishay
File Size 293.46 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet VSMB10940 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VSMB10940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION VSMB10940 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD). FEATURES • Package type: Surface mount • Package form: Side view • Dimensions (L x W x H in mm): 3 x 2 x 1 • Peak wavelength: p = 940 nm • High reliability • High radiant power • High radiant intensity • High speed • Angle of half sensitivity:  = ± 75° • Low forward voltage • Package matches with detector VEMD10940F • Floor life: 168 h, MSL 3, acc.