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VSMB10940
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
DESCRIPTION
VSMB10940 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD).
FEATURES • Package type: Surface mount • Package form: Side view • Dimensions (L x W x H in mm): 3 x 2 x 1 • Peak wavelength: p = 940 nm • High reliability • High radiant power • High radiant intensity • High speed • Angle of half sensitivity: = ± 75° • Low forward voltage • Package matches with detector VEMD10940F • Floor life: 168 h, MSL 3, acc.