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VSMG2000X01 - Emitting Diodes

Description

VSMG2000X01 series are infrared, 850 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).

Features

  • Package type: surface-mount.
  • Package form: GW, RGW.
  • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8.
  • AEC-Q101 qualified.
  • Peak wavelength: λp = 850 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 12°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Terminal configurations: gullwing or reserve gullwing.
  • Package matches.

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Datasheet preview – VSMG2000X01

Datasheet Details

Part number VSMG2000X01
Manufacturer Vishay
File Size 154.60 KB
Description Emitting Diodes
Datasheet download datasheet VSMG2000X01 Datasheet
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Full PDF Text Transcription

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End of Life April-2020 - Alternative Device: VSMY2850RGX01, VSMY2850GX01 www.vishay.com VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH VSMG2000X01 VSMG2020X01 21725-2 DESCRIPTION VSMG2000X01 series are infrared, 850 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). FEATURES • Package type: surface-mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.
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