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VSMY2853G - High Speed Infrared Emitting Diodes

Datasheet Summary

Description

As part of the portfolio, the VSMY2853 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).

Features

  • Package type: surface mount.
  • Package form: GW, RGW.
  • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55.
  • Peak wavelength: λp = 850 nm.
  • High reliability.
  • High radiant power 22689.
  • Very high radiant intensity.
  • Angle of half intensity: ϕ = ± 28°.
  • Suitable for high pulse current operation.
  • Terminal configurations: gullwing or reverse gullwing.
  • Package matches with detector VEMD2503X01 series.
  • Fl.

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Datasheet Details

Part number VSMY2853G
Manufacturer Vishay
File Size 263.61 KB
Description High Speed Infrared Emitting Diodes
Datasheet download datasheet VSMY2853G Datasheet
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Full PDF Text Transcription

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VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2853RG VSMY2853G FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 • Peak wavelength: λp = 850 nm • High reliability • High radiant power 22689 • Very high radiant intensity • Angle of half intensity: ϕ = ± 28° • Suitable for high pulse current operation • Terminal configurations: gullwing or reverse gullwing • Package matches with detector VEMD2503X01 series • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Material categorization: For definitions of compliance please see www.vishay.
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