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VSMY98525DS Datasheet High Power Infrared Emitting Diode

Manufacturer: Vishay

Overview: .vishay. VSMY98525DS Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter.

Datasheet Details

Part number VSMY98525DS
Manufacturer Vishay
File Size 209.97 KB
Description High Power Infrared Emitting Diode
Datasheet VSMY98525DS-Vishay.pdf

General Description

As part of the SurfLightTM portfolio, the VSMY98525DS is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens.

A 42 mil chip provides outstanding radiant intensity and allows DC operation of the device up to 1 A.

Superior ESD characteristics are ensured by an integrated Zener diode.

Key Features

  • Package type: surface-mount.
  • Double stack technology.
  • Package form: power QFN.
  • Dimensions (L x W x H in mm): 3.85 x 3.85 x 3.00.
  • Peak wavelength: λp = 850 nm.
  • Zener diode for ESD protection up to 2 kV.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 25°.
  • Designed for high drive currents: up to 1 A (DC) and up to 5 A pulses.
  • Low thermal resistance: RthJP = 9 K/W.

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VSMY98525DS Distributor