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VSMY98525DS - High Power Infrared Emitting Diode

Datasheet Summary

Description

As part of the SurfLightTM portfolio, the VSMY98525DS is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens.

Features

  • Package type: surface-mount.
  • Double stack technology.
  • Package form: power QFN.
  • Dimensions (L x W x H in mm): 3.85 x 3.85 x 3.00.
  • Peak wavelength: λp = 850 nm.
  • Zener diode for ESD protection up to 2 kV.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 25°.
  • Designed for high drive currents: up to 1 A (DC) and up to 5 A pulses.
  • Low thermal resistance: RthJP = 9 K/W.

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Datasheet Details

Part number VSMY98525DS
Manufacturer Vishay
File Size 209.97 KB
Description High Power Infrared Emitting Diode
Datasheet download datasheet VSMY98525DS Datasheet
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Full PDF Text Transcription

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www.vishay.com VSMY98525DS Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology DESCRIPTION As part of the SurfLightTM portfolio, the VSMY98525DS is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens. A 42 mil chip provides outstanding radiant intensity and allows DC operation of the device up to 1 A. Superior ESD characteristics are ensured by an integrated Zener diode. FEATURES • Package type: surface-mount • Double stack technology • Package form: power QFN • Dimensions (L x W x H in mm): 3.85 x 3.85 x 3.
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