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VT10200C-M3 - Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 VT10200C 3 2 1 PIN 1 PIN 2 PIN 3 CASE.

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Datasheet Details

Part number VT10200C-M3
Manufacturer Vishay
File Size 120.46 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VT10200C-M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VT10200C-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 VT10200C 3 2 1 PIN 1 PIN 2 PIN 3 CASE PRIMARY CHARACTERISTICS Package TO-220AB IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Diode variations 2 x 5.0 A 200 V 80 A 0.65 V 150 °C Common cathode TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.