VT1045C Datasheet PDF (Dual Low-Voltage Trench MOS Barrier Schottky Rectifier)

VT1045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

TMBS TO-220AB ®.
Trench MOS Schottky technology TO-262AA.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
AEC-Q101 qualified.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC K 2 VT1045C PIN 1 PIN 3 3 1 VIT1045C PIN 1 PIN 3 2 3.
Halogen-free according to IEC 61249-2-21 definition 1 PIN 2 CASE PIN 2 K.

Datasheet Details

Part number	VT1045C
Manufacturer	Vishay
File Size	189.51 KB
Description	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VT1045C Datasheet
Additional preview pages of the VT1045C datasheet.

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Full PDF Text Transcription

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New Product VT1045C, VIT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS TO-220AB ® • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC K 2 VT1045C PIN 1 PIN 3 3 1 VIT1045C PIN 1 PIN 3 2 3 • Halogen-free according to IEC 61249-2-21 definition 1 PIN 2 CASE PIN 2 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.

Published: Mar 28, 2012 |