Datasheet4U.com

VT2045CBP - Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

📥 Download Datasheet

VT2045CBP Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – VT2045CBP

Datasheet Details

Part number	VT2045CBP
Manufacturer	Vishay
File Size	121.28 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	VT2045CBP Datasheet
Additional preview pages of the VT2045CBP datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
TJ 200 °C max. in solar bypass mode.

📁 Similar Datasheet

VT2021 - High Definition Audio Codec (VIA)
VT20N1 - Photoconductive Cell (PerkinElmer Optoelectronics)
VT20N2 - Photoconductive Cell (PerkinElmer Optoelectronics)
VT20N3 - Photoconductive Cell (PerkinElmer Optoelectronics)
VT20N4 - Photoconductive Cell (PerkinElmer Optoelectronics)
VT23N1 - Photoconductive Cell (PerkinElmer Optoelectronics)
VT23N2 - Photoconductive Cell (PerkinElmer Optoelectronics)
VT23N3 - Photoconductive Cell (PerkinElmer Optoelectronics)

Other Datasheets by Vishay

VT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT2045C-M3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT2045CHM3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT2045BP - Trench MOS Barrier Schottky Rectifier
VT2060C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VT2060C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Published: Apr 27, 2016 |