Datasheet4U Logo Datasheet4U.com

VT2045CBP - Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • TJ 200 °C max. in solar bypass mode.

📥 Download Datasheet

Datasheet preview – VT2045CBP

Datasheet Details

Part number VT2045CBP
Manufacturer Vishay
File Size 121.28 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VT2045CBP Datasheet
Additional preview pages of the VT2045CBP datasheet.

📁 Similar Datasheet

  • VT2021 - High Definition Audio Codec (VIA)
  • VT20N1 - Photoconductive Cell (PerkinElmer Optoelectronics)
  • VT20N2 - Photoconductive Cell (PerkinElmer Optoelectronics)
  • VT20N3 - Photoconductive Cell (PerkinElmer Optoelectronics)
  • VT20N4 - Photoconductive Cell (PerkinElmer Optoelectronics)
  • VT23N1 - Photoconductive Cell (PerkinElmer Optoelectronics)
  • VT23N2 - Photoconductive Cell (PerkinElmer Optoelectronics)
  • VT23N3 - Photoconductive Cell (PerkinElmer Optoelectronics)
Other Datasheets by Vishay
  • VT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
  • VT2045C-M3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
  • VT2045CHM3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
  • VT2045BP - Trench MOS Barrier Schottky Rectifier
  • VT2060C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • VT2060C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • VT2060G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • VT2060G - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com VT2045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A TMBS ® TO-220AB VT2045CBP 3 2 1 PIN 1 PIN 2 PIN 3 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TOP max. (AC mode) TJ max.
Published: |