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VT5200-E3 - Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VT5200-E3
Manufacturer Vishay
File Size 201.72 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VT5200-E3 Datasheet
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Full PDF Text Transcription

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VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AC TMBS ® ITO-220AC VT5200 PIN 1 PIN 2 1 CASE 2 TO-263AB K VFT5200 PIN 1 PIN 2 TO-262AA K 2 1 A NC VBT5200 NC K A HEATSINK VIT5200 NC A K NC K A HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 5.0 A 200 V 80 A 0.65 V 150 °C TO-220AC, ITO-220AC, TO-263AB, TO-262AA Diode variation Single die FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max.
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