Datasheet4U Logo Datasheet4U.com

VT6045CBP - Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • TJ 200 °C max. in solar bypass mode.

📥 Download Datasheet

Datasheet preview – VT6045CBP

Datasheet Details

Part number VT6045CBP
Manufacturer Vishay
File Size 128.85 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VT6045CBP Datasheet
Additional preview pages of the VT6045CBP datasheet.

📁 Similar Datasheet

  • VT6102 - PCI Fast Ethernet Controller with ACPI Function (Via Technologies)
  • VT6103 - Fast Ethernet 10/100 Transceiver (VIA)
  • VT6105 - Rhine III 10/100 Mbps PCI Fast Ethernet Controller (VIA)
  • VT6130 - PCI Express Gigabit Ethernet Controller (VIA)
  • VT6202 - USB 2.0 UHCI and EHCI Host Controller (VIA)
  • VT6208 - 65536 x 4 SRAM (VLSI Technology)
  • VT6208L - 65536 x 4 SRAM (VLSI Technology)
  • VT6212 - PCI USB2.0 Controller (Via)
  • VT6212L - PCI USB2.0 Controller (Via)
  • VT6304 - 1394.A 4 PORT PHYSICAL LAYER CHIP (VIA)
Other Datasheets by Vishay
  • VT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
  • VT6045C-M3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
  • VT6045CHM3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
  • VT60M45C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • VT60M45CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com VT6045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A TMBS ® TO-220AB VT6045CBP 3 2 1 PIN 1 PIN 2 PIN 3 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TOP max. (AC mode) TJ max.
Published: |