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VT760-E3 - Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VT760-E3
Manufacturer Vishay
File Size 137.48 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VT760-E3 Datasheet
Additional preview pages of the VT760-E3 datasheet.

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Full PDF Text Transcription

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VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AC TMBS ® ITO-220AC VT760 PIN 1 PIN 2 2 1 CASE TO-263AB K VFT760 PIN 1 PIN 2 TO-262AA K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package) • Material categorization: for definitions of compliance please see www.vishay.
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