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VX80M100PW - Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology Available.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VX80M100PW
Manufacturer Vishay
File Size 125.49 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VX80M100PW Datasheet

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Full PDF Text Transcription

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www.vishay.com VX80M100PW Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.44 V at IF = 10 A 1 2 3 TO-247AD 3L PIN 1 PIN 3 PIN 2 CASE FEATURES • Trench MOS Schottky technology Available • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 2 x 40 A VRRM IFSM VF at IF = 40 A (TJ = 125 °C) 100 V 550 A 0.66 V TJ max.
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