Si3865BDV Description
The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFET® is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch.
Si3865BDV Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- 60 m Low RDS(on) TrenchFET®: 1.8 V Rated
- 1.8 V to 8 V Input
- 1.5 V to 8 V Logic Level Control
- Low Profile, Small Footprint TSOP-6 Package
- 3000 V ESD Protection On Input Switch, VON/OFF
- Adjustable Slew-Rate
- pliant to RoHS Directive 2002/95/EC
- Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on