Si8800EDB Description
New Product .. Si8800EDB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.080 at VGS = 4.5 V 20 0.090 at VGS = 2.5 V 0.105 at VGS = 1.8 V 0.150 at VGS = 1.5 V ID (A)a 2.8 2.6 2.4 2.0 3.2 nC Qg.
Si8800EDB Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- Ultra Small 0.8 mm x 0.8 mm Outline
- Ultra Thin 0.357 mm Height
- Typical ESD Protection 1500 V
- pliant to RoHS Directive 2002/95/EC