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VM9002 - 100V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V,55A, RDS(ON) =11.8mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number VM9002
Manufacturer Viva Electronics
File Size 585.93 KB
Description 100V N-Channel MOSFET
Datasheet download datasheet VM9002 Datasheet

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Full PDF Text Transcription

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VM9002 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration D D D DD D D DD S SSG G GS S S S 100V N-Channel MOSFETs BVDSS RDSON ID 100V 11.8mΩ 55A Features  100V,55A, RDS(ON) =11.
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