VM9002 Datasheet | Viva Electronics

General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration D D DD D D DD S SSG G GS S S 100V N-Channel MOSFETs BVDSS RDSON 100V 11.8mΩ 55A Features - 100V,55A, RDS(ON) =11.8mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - Networking - Load...