Viva Electronics VM9002
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | VM9002 |
|---|---|
| Datasheet | VM9002 Download |
| Manufacturer | Viva Electronics |
| Description | 100V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. PPAK5X6 Pin Configuration D D D DD D D DD S SSG G GS S S S 100V N-Channel MOSFETs BVDSS RDSON ID 100V 11.8mΩ 55AFEATURES
● 100V,55A, RDS(ON) =11.8mΩ@VGS = 10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● Networking● Load Switch
● LED applications
● Quick Charger
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Characteristics Symbol RθJA RθJC Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to Case Rating 100 ±20 55 35 220 125 50 98 0.79 -55 to 150 -55 to 150 Units V V A A A mJ A W W/℃ ℃ ℃ Typ. ----- Max.
