WAYON WM02N08F
N-Channel Enhancement MOSFET
| Part No. | WM02N08F |
|---|---|
| Datasheet | WM02N08F Download |
| Manufacturer |  WAYON |
| Description | N-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
● Way-on Small Signal MOSFETs● VDS= 20V, ID = 0.75A RDS(on) < 0.38Ω @ VGS = 4.5V RDS(on) < 0.45Ω @ VGS = 2.5V
● Trench LV MOSFET Technology
● ESD Protected Mechanical Characteristics
● DFN1006-3L Package
● Marking : Making Code
● RoHS Compliant Schematic & PIN Configuration D G S Device symbol WM02N08F N-Channel Enhancement MOSFET G D S DFN1006-3L G D S DFN1006-3L(Top View) Absolute Maximum Rating (TA=25°C unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current TA=25°C ID 0.75 Pulsed Drain Current1 IDM 3 Power Dissipation TA=25°C PD 150 Operating Junction and Storage Temperature Range Thermal Characteristics Parameter TJ ,TSTG Symbol -55 to 150 Value Thermal Resistance from Junction to Ambient2 RθJA 833 Rev.E,2021 Doc:W0803104 Unit V V A A mW °C Unit °C/W 1/4 WM02N08F
ELECTRICAL CHARACTERISTICS
(Tamb=25°C unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Dr...
