WM02N08F - N-Channel Enhancement MOSFET

WAYON

Key Features

Way-on Small Signal MOSFETs.
VDS= 20V, ID = 0.75A RDS(on) < 0.38Ω @ VGS = 4.5V RDS(on) < 0.45Ω @ VGS = 2.5V.
Trench LV MOSFET Technology.
ESD Protected Mechanical Characteristics.
DFN1006-3L Package.
Marking : Making Code.
RoHS Compliant Schematic & PIN Configuration D G S Device symbol WM02N08F N-Channel Enhancement MOSFET G D S DFN1006-3L G D S DFN1006-3L(Top View) Absolute Maximum Rating (TA=25°C unless otherwise noted) Parameter Symbol Value Drain-So.

WM02N08F n-channel enhancement mosfet by WAYON - Datasheet Preview

Datasheet Details

Part number	WM02N08F
Manufacturer	WAYON
File Size	383.51 KB
Description	N-Channel Enhancement MOSFET
Datasheet	WM02N08F Datasheet

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Full PDF Text Transcription (Reference)

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Features  Way-on Small Signal MOSFETs  VDS= 20V, ID = 0.75A RDS(on) < 0.38Ω @ VGS = 4.5V RDS(on) < 0.45Ω @ VGS = 2.5V  Trench LV MOSFET Technology  ESD Protected Mechanical Characteristics  DFN1006-3L Package  Marking : Making Code  RoHS Compliant Schematic & PIN Configuration D G S Device symbol WM02N08F N-Channel Enhancement MOSFET G D S DFN1006-3L G D S DFN1006-3L(Top View) Absolute Maximum Rating (TA=25°C unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current TA=25°C ID 0.