WAYON WM02P41M
P-Channel Enhancement MOSFET
| Part No. | WM02P41M |
|---|---|
| Datasheet | WM02P41M Download |
| Manufacturer |  WAYON |
| Description | P-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
● Way-on Small Signal MOSFETs● VDS= -20 V, ID = -4.1A RDS(on) < 45mΩ @ VGS = -4.5V RDS(on) < 57mΩ @ VGS = -2.5V
● Trench LV MOSFET Technology Mechanical Characteristics
● SOT-23 Package
● Marking : Making Code
● RoHS Compliant Schematic & PIN Configuration WM02P41M P-Channel Enhancement MOSFET SOT-23 Absolute Maximum Rating (TA=25°C unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C ID -4.1 Pulsed Drain Current1 IDM -13 Power Dissipation TA=25°C PD 1.2 Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance from Junction to Ambient2 TJ, TSTG Symbol RθJA -55 to 150 Value 104 Rev.I,2021 Doc:W0803029 Unit V V A A W °C Unit °C/W 1/5 WM02P41M
ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min. Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS= 0V, ID= -250μA -20 Gate-Body Leakage IGSS VDS= 0V,...
