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WM02P41M - P-Channel Enhancement MOSFET

Key Features

  • Way-on Small Signal MOSFETs.
  • VDS= -20 V, ID = -4.1A RDS(on) < 45mΩ @ VGS = -4.5V RDS(on) < 57mΩ @ VGS = -2.5V.
  • Trench LV MOSFET Technology Mechanical Characteristics.
  • SOT-23 Package.
  • Marking : Making Code.
  • RoHS Compliant Schematic & PIN Configuration WM02P41M P-Channel Enhancement MOSFET SOT-23 Absolute Maximum Rating (TA=25°C unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current.

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Datasheet Details

Part number WM02P41M
Manufacturer WAYON
File Size 590.35 KB
Description P-Channel Enhancement MOSFET
Datasheet download datasheet WM02P41M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Way-on Small Signal MOSFETs  VDS= -20 V, ID = -4.1A RDS(on) < 45mΩ @ VGS = -4.5V RDS(on) < 57mΩ @ VGS = -2.5V  Trench LV MOSFET Technology Mechanical Characteristics  SOT-23 Package  Marking : Making Code  RoHS Compliant Schematic & PIN Configuration WM02P41M P-Channel Enhancement MOSFET SOT-23 Absolute Maximum Rating (TA=25°C unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C ID -4.1 Pulsed Drain Current1 IDM -13 Power Dissipation TA=25°C PD 1.2 Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance from Junction to Ambient2 TJ, TSTG Symbol RθJA -55 to 150 Value 104 Rev.