WM03N58M - N-Channel Enhancement MOSFET

WAYON

Key Features

Way-on Small Signal MOSFETs.
VDS= 30V, ID = 5.8A RDS(on) < 27mΩ @ VGS = 10V RDS(on) < 31mΩ @ VGS = 4.5V.
Trench LV MOSFET Technology Mechanical Characteristics.
SOT-23 Package.
Marking : Making Code.
RoHS Compliant Schematic & PIN Configuration D G S Device symbol WM03N58M N-Channel Enhancement MOSFET G D S SOT-23(Top View) Absolute Maximum Rating (TA=25°C unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 30 Gate-Source Voltage VGS.

WM03N58M n-channel enhancement mosfet by WAYON - Datasheet Preview

Datasheet Details

Part number	WM03N58M
Manufacturer	WAYON
File Size	801.82 KB
Description	N-Channel Enhancement MOSFET
Datasheet	WM03N58M Datasheet

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Full PDF Text Transcription (Reference)

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Features  Way-on Small Signal MOSFETs  VDS= 30V, ID = 5.8A RDS(on) < 27mΩ @ VGS = 10V RDS(on) < 31mΩ @ VGS = 4.5V  Trench LV MOSFET Technology Mechanical Characteristics  SOT-23 Package  Marking : Making Code  RoHS Compliant Schematic & PIN Configuration D G S Device symbol WM03N58M N-Channel Enhancement MOSFET G D S SOT-23(Top View) Absolute Maximum Rating (TA=25°C unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C ID 5.8 Pulsed Drain Current1 IDM 22 Power Dissipation TA=25°C PD 1.