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WMN12N60VD - Super Junction Power MOSFET

General Description

WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance.

WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.

Key Features

  • VDS =650V @ Tj,max.
  • IDM =18A.
  • Typ. RDS(on) =0.6Ω.
  • 100% UIS tested.
  • Pb-free plating, Halogen free.

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Datasheet Details

Part number WMN12N60VD
Manufacturer WAYON
File Size 594.70 KB
Description Super Junction Power MOSFET
Datasheet download datasheet WMN12N60VD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WML12N60VD, WMK12N60VD, WMM12N60VD WMN12N60VD, WMP12N60VD, WMO12N60VD 600V 0.6Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =650V @ Tj,max  IDM =18A  Typ. RDS(on) =0.