WAYON WMN12N60VD
Super Junction Power MOSFET
DESCRIPTION
WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.FEATURES
● VDS =650V @ Tj,max● IDM =18A
● Typ. RDS(on) =0.6Ω
● 100% UIS tested
● Pb-free plating, Halogen free
APPLICATIONS
LED Lighting, Charger, Adapter, PC, LCD TV, Server GDS TO-220F D GDS TO-262 GD S TO-220 D S G TO-263 GD S TO-251 S G TO-252 RoHS compliantABSOLUTE MAXIMUM RATINGS
Parameter Drain-source voltage Continuous drain current1) Pulsed drain current2) ( TC = 25°C ) ( TC = 100°C ) Gate-source voltage Avalanche energy, single pulse3) Avalanche energy, repetitive2) Avalanche current, repetitive2) Power dissipation ( TC = 25°C ) Operating and storage temperature r