BAV199 Key Features
- 55 to + 150
- Diode Capacitance (VR = 0V, f = 1.0 MHz)
- Forward Voltage
- Note: 1. Part mounted on FR-4 board with remended pad layout
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
BAV199 | Low-leakage double diode |
Infineon |
BAV199 | Silicon Low Leakage Diode |
DC COMPONENTS |
BAV199 | SURFACE MOUNT SWITCHING DIODES |
SEMTECH |
BAV199 | LOW LEAKAGE DOUBLE DIODE |
SeCoS Halbleitertechnologie GmbH |
BAV199 | Switching Diode |