BCX53
PNP Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR
3. EMITTER
1 2 3
SOT-89
MAXIMUM RATINGS ( TA=25°C unless otherwise noted)
Rating
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current Continuous
Total Device Dissipation TA=25°C Junction Temperature Range
PD TJ
Storage Temperature Range
Tstg
Value -100 -80 -5.0 -1.0
500 +150
-55 to +150
Unit V V V A m W ˚C
˚C
Device Marking
BCX53=AH , BCX53-10=AK , BCX53-16=AL
OFF CHARACTERISTICS
Characteristics Collector-Base Breakdown Voltage, IC = -100µA, IE = 0 Collector-Emitter Breakdown Voltage, IC = -10m A, IB = 0 Emitter-Base Breakdown Voltage, IE = -10µA, IC = 0 Collector Cut-off Current, VCB = -30V, IE = 0 Emitter Cut-off Current, VEB = -5.0V, IC = 0
Symbol Min Max
V(BR)CBO V(BR)CEO
- -100 -80
V(BR)EBO
- -5.0
ICBO
- -0.1 IEBO
- -0.1
Unit V V V µA µA
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