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DTD123Y - Bias Resistor Transistor NPN Silicon

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Part number DTD123Y
Manufacturer WEITRON
File Size 342.25 KB
Description Bias Resistor Transistor NPN Silicon
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Bias Resistor Transistor NPN Silicon P b Lead(Pb)-Free R1 1 BASE R 2 COLLECTOR 3 2 EMITTER DTD123Y 3 1 2 SOT-23 Absolute maximum ratings (TA = 25ºC) Parameter Symbol Limits Unit Supply voltage Vcc 50 V Input voltage VIN -5~+12 V Output current IC 500 mA Power dissipation Pd 200 mW Junction temperature Tj 150 Storage temperature Tstg -55~+150 Electrical characteristics (TA = 25ºC) Parameter Symbol Min Typ Max Unit Conditions Input voltage Output voltage Input current VI(off) - VI(on) 2 Vo(on) - II - - 0.3 - - V 0.1 0.3 V - 3.6 mA Vcc = 5V,Io = 100µA Vo = 0.3V,Io = 20 mA Io/II = 50 mA/2.5 mA VI= 5V Output current DC current gain Input resistance Io(off) - - 0.5 µA h FE 56 - - R1 1.54 2.2 2.
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