DTD123Y - Bias Resistor Transistor NPN Silicon

WEITRON

Datasheet Details

Part number	DTD123Y
Manufacturer	WEITRON
File Size	342.25 KB
Description	Bias Resistor Transistor NPN Silicon
Datasheet	DTD123Y Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
DTD123Y	Digital transistors	Rohm
DTD123Y	NPN DIGITAL TRANSISTOR	UTC
DTD123YC	Digital Transistor	ROHM
DTD123YK	NPN 500mA 50V Digital Transistors	Rohm
DTD123YKFRA	Digital Transistors	ROHM

Other Datasheets by WEITRON

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Bias Resistor Transistor NPN Silicon P b Lead(Pb)-Free R1 1 BASE R 2 COLLECTOR 3 2 EMITTER DTD123Y 3 1 2 SOT-23 Absolute maximum ratings (TA = 25ºC) Parameter Symbol Limits Unit Supply voltage Vcc 50 V Input voltage VIN -5~+12 V Output current IC 500 mA Power dissipation Pd 200 mW Junction temperature Tj 150 Storage temperature Tstg -55~+150 Electrical characteristics (TA = 25ºC) Parameter Symbol Min Typ Max Unit Conditions Input voltage Output voltage Input current VI(off) - VI(on) 2 Vo(on) - II - - 0.3 - - V 0.1 0.3 V - 3.6 mA Vcc = 5V,Io = 100µA Vo = 0.3V,Io = 20 mA Io/II = 50 mA/2.5 mA VI= 5V Output current DC current gain Input resistance Io(off) - - 0.5 µA h FE 56 - - R1 1.54 2.2 2.