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KTA166
PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1
2
3
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits -35 -30 -5.0 -0.8 0.5 -55 to +150 -55 to +150 Unit V V V A W ˚C ˚C
ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-1mA, I E=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -35 -30 -5 Typ Max -0.1 -0.