Click to expand full text
Dual General Purpose Transistor NPN+NPN Silicon
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
Symbol
VCEO VCBO VEBO
IC
MBT3904DW
3 21
45
6
NPN+NPN
6 54
123
SOT-363(SC-88)
Value 40 60 6.0 200
Unit Vdc Vdc Vdc mAdc
Thermal Characteristics
Characteristics Total Device Dissipation TA=25 C
Thermal Resistance, Junction to Ambient Junction and Storage, Temperature
Symbol PD
RθJA TJ,Tstg
Max 150 833 -55 to +150
Unit mW C/W
C
Device Marking
MBT3904DW=MA
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Off C har acter istics
Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc.