MBT3904DW
Dual General Purpose Transistor NPN+NPN Silicon
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
Symbol
VCEO VCBO VEBO
3 21
NPN+NPN
6 54
SOT-363(SC-88)
Value 40 60 6.0 200
Unit Vdc Vdc Vdc m Adc
Thermal Characteristics
Characteristics Total Device Dissipation TA=25 C
Thermal Resistance, Junction to Ambient Junction and Storage, Temperature
Symbol PD
RθJA TJ,Tstg
Max 150 833 -55 to +150
Unit m W C/W
Device Marking
MBT3904DW=MA
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Off C har acter istics
Collector-Emitter Breakdown Voltage(2) (IC=1.0m Adc.IB=0)
V(BR)CEO
Collector-Base Breakdown Voltage (IC=10 u Adc, IE=0)
V(BR)CBO
Emitter-Base Breakdown Voltage (IE=10 u Adc, IC=0)
V(BR)EBO
Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc)
Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc)
1. Device Mounted FR4 glass epoxy printed circuit...
