MBT3946DW
Dual General Purpose Transistor NPN+PNP Silicon
Maximum Ratings
Rating Collector-Emitter Voltage
(NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base VOltage (NPN) (PNP) Collector Current-Continuous (NPN) (PNP)
Thermal Characteristics
Characteristics Total Package Dissipation (1) TA=25 C
Thermal Resistance, Junction to Ambient Junction and Storage, Temperature
Device Marking
MBT3946DW=46
Symbol VCEO VCBO VEBO
Symbol PD R q JA
TJ,Tstg
3 21
NPN+PNP
Value
40 -40
60 -40
6.0 -5.0
200 -200
6 54 123
SOT-363(SC-88)
Unit Vdc
Vdc
Vdc m Adc
Max
150 833 -55 to +150
Unit m W C/W
WEITRON http://.weitron..tw
Off C har acter istics
Collector-Emitter Breakdown Voltage(2) (IC=1.0m Adc.IB=0) (NPN)
(IC=-1.0m Adc.IB=0) (PNP)
V(BR)CEO
40 -40
- Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0) (NPN)
(IC=-10 µAdc, IE=0) (PNP)
Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0) (NPN) (IE=-10 µAdc, IC=0)...
