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Switching Transistor PNP Silicon
M aximum R atings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous
Symbol
VCEO VCBO VEBO
IC
MMBT4403
COLLECTOR 3
1 BASE
2 EMITTER
3
1 2
SOT-23
Value -40 -40 -5.0
-600
Unit Vdc Vdc Vdc mAdc
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD R qJA
PD R qJA TJ,Tstg
Max 225
1.8 556 300
2.