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High Voltage PNP Transistors
MMBT5401
COLLECTOR 3
1 BASE
2 EMITTER
3
1 2
SOT-23
WEITRON
http://www.weitron.com.tw
MMBT5401
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
ON CHARACTERISTICS DC Current Gain
(IC=-1.0mAdc, VCE=-5.0Vdc) (IC=-10mAdc, VCE=-5.0Vdc) (IC=-50mAdc, VCE=-5.0Vdc)
Collector-Emitter Saturation Voltage (IC=-10mAdc, IB=-1.0mAdc) (IC=-50mAdc, IB=-5.0mAdc)
Base-Emitter Saturation Voltage (IC=-10mAdc, IB=-1.0mAdc) (IC=-50mAdc, IB=-5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
Collector-Gain-Bandwidth Product ( IC -10mVdc,VCE=-10Vdc, f=100MHz)
Output Capacitance ( VCB -10Vdc, IE=0, f=1.0MHz)
Small Signal Current Gain ( IC -1.0 mVdc,V CE=-10Vdc, f=1.0kHz) Noise Figure ( IC -200 uA dc,V CE=-5.0Vdc, Rs=10 , f=1.