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MMBT5551 - High Voltage NPN Transistors

Download the MMBT5551 datasheet PDF. This datasheet also covers the MMBT5550 variant, as both devices belong to the same high voltage npn transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MMBT5550-WEITRON.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MMBT5551
Manufacturer WEITRON
File Size 312.75 KB
Description High Voltage NPN Transistors
Datasheet download datasheet MMBT5551 Datasheet

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Other Datasheets by WEITRON

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage NPN Transistors MMBT5550 MMBT5551 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) 1.0 , -100 , 10 , (3) MMBT5550 MMBT5551 MMBT5550 MMBT5551 WEITRON http://www.weitron.com.tw 140 160 160 180 6.0 MMBT5550 MMBT5551 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS Collector Cutoff Current ( VCB ( VCB ( VCB ( VCB 100 Vdc,IE= 120 Vdc, IE= 100 Vdc,IE= 100 Vdc,IE= ) ) ,TA= 100 C ) ,TA= 100 C ) Emitter Cutoff Current ( VEB 4.0Vdc, IC=0 ) MMBT5550 MMBT5551 MMBT5550 MMBT5551 I CBO I EBO Max 100 50 100 50 50 Unit nAdc uAdc nAdc ON CHARACTERISTICS DC Current Gain (IC=1.0 mAdc, VCE=5.