WEITRON PZTA14
Darlington NPN Silicon Planar Epitaxial Transistor
| Part No. | PZTA14 |
|---|---|
| Datasheet | PZTA14 Download |
| Manufacturer |  WEITRON |
| Description | Darlington NPN Silicon Planar Epitaxial Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg Value 30 30 10 300 2 150 -55 to +150 Unit V V V mA W C C Device Marking PZTA14=A14ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC = 1mA , IB=0) Symbol Min Max Unit V(BR)CEO 30 - V Collector-Base Breakdown Voltage (IC =100µA , IE=0) V(BR)CBO 30 - V Emitter-Base Breakdown Voltage (IE = 10 µA , IC=0) V(BR)EBO 10 - V Collector-Base Cutoff Current (VCB = 30V) ICBO - 100 nA Emitter-Base Cutoff Current (VEB = 10Vdc , IC=0) IEBO - 100 nA NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575
