WEITRON TIP126
PNP Transistor
FEATURES
: * Medium Power Complementary silicon transistors * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TIP120 Series 1 23 1. BASE 2. COLLECTOR 3. EMITTER TO-220MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter TIP120 TIP125 VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage IC Collector Current -Continuous PC R ӨJA R ӨJC TJ Tstg Collector Power Dissipation Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Junction Temperature Storage Temperature TIP121 TIP126 80 80 5 5 2 62.5 1.92 150 -55-150 TIP122 TIP127 100 100 Units V V V A W ℃/W ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions TIP120,TIP125 Collector-base breakdown voltage TIP121,TIP126 TIP122,TIP127 V(BR)CBO IC=1mA, IE=0 TIP120,TIP125 Collector-emitter breakd