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RoHS
2SA821S
2SA821S
FEATURES Power dissipation PD: 0.25
TRANSISTOR (PNP)
TO-92S
1. EMITTER 2. COLLECTOR 3. BASE
W (Tamb=25℃)
Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE
Collector-emitter saturation voltage Transition frequency
W
Output capacitance
J E
E
C E L
N 56-120
R T
unless otherwise specified)
conditions MIN -210 -210 -5 -1 -1 56 270 -0.
2SA821S Datasheet
