• Part: 2SA821S
  • Description: PNP Transistor
  • Manufacturer: WEJ
  • Size: 136.75 KB
Download 2SA821S Datasheet PDF

Datasheet Summary

RoHS Features Power dissipation PD: 0.25 TRANSISTOR (PNP) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE Collector-emitter saturation voltage Transition frequency Output capacitance N 56-120 R T unless otherwise specified) conditions MIN -210...