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RoHS
2SC2786
NPN EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA
D* Collector-Emitter Voltage:Vce= 45V
* High Total Power Dissipation:Pc=225mW
T* High Hfe And Good Linearity
.,LABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Collector-Base Voltage
Vcbo
50
OCollector-Emitter Voltage
Vceo
45
2.9 1.9 0.95 0.95 0.4
Emitter-Base Voltage
Vebo
5
CCollector Current
Ic 100
Collector Dissipation Ta=25 *
PD 225
ICJunction Temperature
Tj 150
Storage Temperature
Tstg -55-150
Unit V V V mA
mW
1.
2.4 1.3
1.BASE 2.EMITTER 3.
2SC2786 Datasheet
