Click to expand full text
RoHS 2SD780/2SD780A
SOT-23-3L
2SD780/2SD780A DFEATURES Power dissipation
TRANSISTOR (NPN)
1. BASE 2. EMITTER 3. COLLECTOR
TPCM: 0.2 W (Tamb=25℃)
1. 02
.,LCollector current
0. 95¡ À0. 025
0. 35 2. 92¡ À0. 05
ICM: 0.3 Collector-base voltage
A
OV(BR)CBO:
V(BR)CBO:
60 V 2SD780 80 V 2SD780A
1. 9
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter
Symbol
Test conditions
MIN
NCollector-base breakdown voltage OCollector-emitter breakdown voltage
V(BR)CBO V(BR)CEO
Ic=0.1mA, IE=0 Ic=1mAIB=0
2SD780 2SD780A
2SD780 2SD780A
60 80 60 80
Emitter-base breakdown voltage
V(BR)EBO
IE=0.
2SD780 Datasheet
