ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) ICParameter Symbol Test conditions MIN NCollector-base breakdown voltage OCollector-emitter breakdown voltage V(BR)CBO V(BR)CEO Ic=0.1mA, IE=0 Ic=1mAIB=0 2SD780 2SD780A 2SD780 2SD780A 60 80 60 80 Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5 RCollector cut-off current ICBO VCB=50V, IE=0 TEmitter cut-off current IEBO VEB=5V, IC=0 ECDC current gain hFE(1) hFE(2) VCE=1V, IC=50mA VCE=2V, IC=300mA 110 30 LCollector-emitter saturation voltage VCE(sat) IC=300mA, IB=30mA Base-emitter voltage VBE VCE=6V, IC=10mA 0.6 ETransition frequency fT VCE=6V, IC=10mA JCollector output capacitance Cob VCB=6V, IE=0, f=1MHz 2. 80¡ À0. 05 1. 60¡ À0. 05 TYP MAX UNIT V V V 0.1 µA 0.1 µA 400 0.6 V 0.7 V 140 MHz 7 pF ECLASSIFICATION OF hFE(1) W Rank Range 110-180 135-220 170-270 200-320 250-400 Marking 2SD780 2SD780A DW1 D51 DW2 D52 DW3 D53 DW4 D54 DW5 D55 WEJ ELECTRONIC CO. Http:// E-mail:wej@yongerjia.com
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