• Part: 2SD780
  • Description: NPN EPITAXIAL SILICON TRANSISTOR
  • Manufacturer: WEJ
  • Size: 137.08 KB
Download 2SD780 Datasheet PDF

Datasheet Summary

RoHS 2SD780/2SD780A SOT-23-3L 2SD780/2SD780A DFeatures Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR TPCM: 0.2 W (Tamb=25℃) 1. 02 .,LCollector current 0. 95¡ À0. 025 0. 35 2. 92¡ À0. 05 ICM: 0.3 Collector-base voltage OV(BR)CBO: V(BR)CBO: 60 V 2SD780 80 V 2SD780A 1. 9 COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter Symbol Test conditions NCollector-base breakdown voltage OCollector-emitter breakdown voltage V(BR)CBO V(BR)CEO Ic=0.1mA, IE=0 Ic=1mAIB=0 2SD780 2SD780A 2SD780 2SD780A 60 80 60 80 Emitter-base breakdown voltage V(BR)EBO IE=0....