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2SD874A - NPN EPITAXIAL SILICON TRANSISTOR

Key Features

  • Power dissipation TPCM: 500 mW (Tamb=25℃) . ,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2.

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Datasheet Details

Part number 2SD874A
Manufacturer WEJ
File Size 134.00 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet 2SD874A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RoHS 2SD874A 2SD874A TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3.