The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
RoHS
BAS116LT1
SURFACE MOUNT SWITCHING DIODE
• Low Leakage Current Applications • Medium Speed Switching Times
Package:SOT-23
DABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
TNon-Repetitive Peak Reverse
Voltage
VRM
100
.,LPeak Repetitive Reverse Voltage
working Peak Reverse Voltage DC Blocking Voltage
VRRM VRWM
VR
75
OPeak Forward Current
IF 200
Forward
CCurrent(Note)
Continuous
IFM
300
Power Dissipation Derate Above 25
(Note)
PD
300 2.4
ICJunction Temperature
Tj 150
Storage Temperature
Tstg -50-150
NNote:Diode Ceramic Substrate 10mm 8.0mm 0.7mm
Unit V
V
mAdc mAdc
mW mW/
OELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Max Unit Test Conditions
TRForward Voltage
0.9 V IF=1.0mA 1.0 V IF=10mA VF 1.1 V IF=50mA 1.
BAS116LT1 Datasheet
