BAS16X Datasheet PDF

FEATURES

High-Speed Switching

APPLICATIONS

Lead Finish: 100% Matte Sn ( Tin ) Qualified Reflow Temperature: 260 ℃ Extremely Small SOD-523 Package MARKING: A6

MAXIMUM RATINGS

and

ELECTRICAL CHARACTERISTICS

, Single Diode @TA=25℃ Parameter Symbol Limits DC reverse voltage Forward current ICPak forward surge current Total Device Dissipation NThermal Resistance Junction to Ambient OJunction and storage temperature VR IF IFM(surge) PD RθJA Tj ,Tstg 75 200 500 150 635 150 RElectrical Ratings @TA=25℃ TParameter Reverse breakdown voltage LECForward voltage EReverse recovery Time WEJReverse current Symbol Min. V(BR)R 75 VF1 VF2 VF3 VF4 trr IR1 IR2 IR3 Typ. Max. 715 815 1000 1250 6.0 1.0 50 30 Unit mV ns μA CO.,LTD0.30 1.60 0.80 0.10 0.65 SOD-523 Unit V mA mA mW ℃/W ℃ Conditions IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA IF=IR=10mAdc,RL=50Ω VR=75V VR=75V,Tj=150℃ VR=75V,Tj=150℃ Forward recovery voltage VFR 1.75 V IF=10mA, tr= 20ns Diode Capacitance CD 2.0 pF VR=0V,f=1MHZ Stored charge QS 45 pC IF=10mA, VR=5.0V ,RL=500Ω WEJ ELECTRONIC CO.