Datasheet Summary
RoHS BAV99DW
BAV99DW SWITCHING DIODE
DFeatures
TPower dissipation
.,LPD: 200 mW (Tamb=25℃)
Collector current
IF: 150 mA
OCollector-base voltage VR: 75 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-363
ONICMAKING: KJG
ECTRELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
LParameter EReverse breakdown voltage
Reverse voltage leakage current
WEJForward voltage
Symbol V(BR) R
Test conditions
IR= 100µA
VR=75V VR=20V IF=1mA IF=10mA IF=50mA IF=150mA
MIN MAX
2.5 0.025 715 855 1000 1250
UNIT V
µA mV
Junction capacitance
Cj VR=0V, f=1MHz
2 pF
Reveres recovery time
IF=IR=10mA trr Irr=0.1×IR
RC=100Ω...
