The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
RoHS
BCX20LT1
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Unit
Collector-Base Voltage
Vcbo
30
V
Collector-Emitter Voltage
Vceo
25
V
Emitter-Base Voltage
Vebo
5.0
V
Collector Current
Ic 500
mA
Total Device Dissipation FR-5 Board(1) Ta=25
PD 225
mw
Derate above 25
1.8 mW/
Total Device Dissipation Alumina Substrate,(2) Ta=25 Derate above 25 Junction Temperature
ICStorage Temperature
PD 300
2.
BCX20LT1 Datasheet
