BF620 - NPN Transistor

WEJ

Key Features

Power dissipation TPCM: 500 mW (Tamb=25℃) . ,LCollector current ICM: Collector-base voltage 50 mA OV(BR)CBO: 300 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2.

BF620 npn transistor by WEJ - Datasheet Preview

Datasheet Details

Part number	BF620
Manufacturer	WEJ
File Size	133.13 KB
Description	NPN Transistor
Datasheet	BF620 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BF620	NPN high-voltage transistors	NXP
BF620	NPN high-voltage Transistors	GME
BF620	NPN Silicon High Voltage Medium-Power Transistor	PLANETA
BF620	Silicon NPN epitaxial planer type Transistors	Kexin
BF620	NPN Transistor	Jin Yu Semiconductor

Other Datasheets by WEJ

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

RoHS BF620 BF620 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 50 mA OV(BR)CBO: 300 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3.