BF620 - NPN Transistor

Features

Power dissipation TPCM: 500 mW (Tamb=25℃) . ,LCollector current ICM: Collector-base voltage 50 mA OV(BR)CBO: 300 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2.

WEJ

BF620 NPN Transistor by WEJ - Datasheet Preview — Datasheet preview – BF620

Datasheet Details

Part number	BF620
Manufacturer	WEJ
File Size	133.13 KB
Description	NPN Transistor
Datasheet	BF620 Datasheet
Additional preview pages of the BF620 datasheet.

📁 Similar Datasheet

BF620 - NPN high-voltage transistors (NXP)
BF620 - NPN high-voltage Transistors (GME)
BF620 - NPN Silicon High Voltage Medium-Power Transistor (PLANETA)
BF620 - Silicon NPN epitaxial planer type Transistors (Kexin)
BF620 - NPN Transistor (Jin Yu Semiconductor)
BF620 - NPN high-voltage transistor (nexperia)
BF621 - PNP high-voltage transistors (NXP)
BF622 - NPN high-voltage transistors (NXP)
BF622 - NPN high-voltage Transistors (GME)
BF622 - Silicon NPN epitaxial planer type Transistors (Kexin)

Other Datasheets by WEJ

Full PDF Text Transcription

Click to expand full text

RoHS BF620 BF620 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 50 mA OV(BR)CBO: 300 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3.

Published: Apr 18, 2016 |