KTA2015 - PNP Transistor

WEJ

Key Features

Power dissipation TPCM: 0.1 W (Tamb=25℃) . ,LCollector current ICM: -0.5 Collector-base voltage A OV(BR)CBO: -35 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ 1. BASE 2.

KTA2015 pnp transistor by WEJ - Datasheet Preview

Datasheet Details

Part number	KTA2015
Manufacturer	WEJ
File Size	132.77 KB
Description	PNP Transistor
Datasheet	KTA2015 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
KTA2015	EPITAXIAL PLANAR PNP TRANSISTOR	KEC
KTA2015	PNP General Purpose Transistors	WEITRON
KTA2015	PNP Transistor	Jin Yu Semiconductor
KTA2015	PNP Silicon Epitaxial Planar Transistor	GME
KTA2012E	EPITAXIAL PLANAR PNP TRANSISTOR	KEC

Other Datasheets by WEJ

Part Number	Description
KTA1663	PNP Transistor
KTA1664	PNP Transistor
KTA1666	PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

RoHS KTA2015 SOT-323 KTA2015 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 0.1 W (Tamb=25℃) .,LCollector current ICM: -0.5 Collector-base voltage A OV(BR)CBO: -35 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER 3.