WEJ KTC3202
NPN Transistor
RoHS KTC3202 KTC3202 TRANSISTOR (NPN) DFEATURES TPower dissipation .,LPCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 OCollector-base voltage A V(BR)CBO: 35 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. COLLECTOR 3. BASE 123 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-BASE breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage TCollector cut-off current CEmitter cut-off current EDC current gain LCollector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE 1 hFE 2 VCE(sat) Test conditions Ic= 0.1mA, IB=0 Ic= 1 mA, IB=0 IE= 0.1 mA, IC=0 VCB= 35V, IE=0 VEB= 5V, IC=0 VCE= 1V, IC= 100mA VCE= 6V, IC= 400mA IC=100 mA, IB= 10mA MIN 35 30 5 70 25 TYP 0.1 EBase-Emitter Saturation Voltage VBE VCE=1V, IC= 100mA 0.8 JTransition frequency ECollector Output Capacitance fT VCE= 6V, IC= 20mA Cob VCB= 6V, IE= 0,f=1 MHz 200 7.0 MAX UNIT V V V 0.1 µA 0.1 µA 240 0.25 V 1.0 V MHz pF WCLASSIFICATION OF hFE(1) Rank OY Range 70-140 120-240 WEJ ELECTRONIC CO.