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MBT6517LT1 - NPN EPITAXIAL SILICON TRANSISTOR

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Part number MBT6517LT1
Manufacturer WEJ
File Size 60.74 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
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    RoHS MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW(Ta=25 ) * Collector-Emitter Voltage :Vceo=350V ABSOLUTE MAXIMUM RATINGS at Ta=25 DCharacteristic Symbol Rating Collector-Base Voltage Vcbo 350 TCollector-Emitter Voltage Vceo 350 .,LEmitter-Base Voltage Collector Current Base Current Vebo Ic Ib 6 500 250 Collector Dissipation Ta=25 * PD 225 OJunction Temperature Storage Temperature Tj 150 Tstg -55-150 2.9 1 .9 0.95 0.95 0.4 V V V mA mA mW 1. 2.4 1.3 1.BASE 2.EMITTER 3.
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