MBT6517LT1 Overview
RoHS MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector Dissipation: FR=1X0.75X0.062in Board,Derate 25 . Pulse Width 300uS,Duty cycle 2% DEVICE MARKING:.
Datasheet Details
| Part number | MBT6517LT1 |
|---|---|
| Datasheet | MBT6517LT1-WEJ.pdf |
| File Size | 60.74 KB |
| Manufacturer | WEJ |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
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