MMBD4448W Overview
RoHS MMBD4448W MMBD4448W SWITCHING DIODE DFEATURES TPower dissipation .,LPD: 200 mW (Tamb=25℃) Collector current IO: 250 mA OCollector-base voltage VR:.
MMBD4448W datasheet by WEJ.
| Part number | MMBD4448W |
|---|---|
| Datasheet | MMBD4448W-WEJ.pdf |
| File Size | 129.67 KB |
| Manufacturer | WEJ |
| Description | DIODE |
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RoHS MMBD4448W MMBD4448W SWITCHING DIODE DFEATURES TPower dissipation .,LPD: 200 mW (Tamb=25℃) Collector current IO: 250 mA OCollector-base voltage VR:.
View MMBD4448W datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MMBD4448W | SURFACE MOUNT SWITCHING DIODES | DC COMPONENTS |
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MMBD4448W | SWITCHING DIODE | Rectron |
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MMBD4448W | SWITCHING DIODE | Sangdest Microelectronics |
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MMBD4448W | SURFACE MOUNT FAST SWITCHING DIODE | WON-TOP |
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MMBD4448W | Switching Diode | Eris |
| Part Number | Description |
|---|---|
| MMBD2836LT1 | MONOL LTHIC DUAL SWITCHING DIODE |
| MMBD2838LT1 | MONOL LTHIC DUAL SWITCHING DIODE |
| MMBD6050LT1 | MONOLITHIC DUAL SWITCHING DIODE |
| MMBT2222AT | NPN Transistor |
| MMBT3906LT1 | TRANSISTOR |
| MMBT5401LT1 | TRANSISTOR |
| MMBT5551LT1 | TRANSISTOR |
| MMBT8050LT1 | NPN EPITAXIAL SILICON TRANSISTOR |