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RoHS MMBD4448W
MMBD4448W SWITCHING DIODE
DFEATURES TPower dissipation
.,LPD: 200 mW (Tamb=25℃)
Collector current
IO: 250 mA
OCollector-base voltage VR: 75 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. 30¡ À0. 03
SOT-323
1. 25¡ À0. 05 2. 30¡ À0. 05
Unit: mm
0. 30 2. 00¡ À0. 05
1. 01 REF
NICMarking: KA3
TROELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
CParameter EReverse breakdown voltage LReverse voltage leakage current EForward voltage EJDiode capacitance WReverse recovery time
Symbol V(BR) R
IR
VF
CD t rr
Test conditions
IR= 10µA
VR=20V VR=75V IF=5mA IF=10mA IF=100mA IF=150mA VR=0V, f=1MHz
IF=IR=10mA Irr=0.1×IR ,RL=100Ω
MIN 75
MAX
0.025 2.5 0.72
0.855 1
1.25 4
4
UNIT V
µA
V
pF nS
Test period <3000µs.
WEJ ELECTRONIC CO.
MMBD4448W Datasheet