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RoHS
MONOLITHIC DUAL SWITCHING DIODE
MMBD6050LT1
DABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
TReverse Voltage
VR 70
.,LForward Current
IF 200
Peak Forward surge Current
IFM(surge)
500
Total Device Dissipation FR-5
PD
225
Board(Note)
ODerate above 25
1.8
Junction Temperature
Tj 150
CStorage Temperature
Tstg -55-150
Unit Vdc Vdc mAdc mW
mW/
Package:SOT-23
ICELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol
Min
Max
Unit
NReverse Breakdown Voltage(IR=100uAdc)
Reverse Voltage Leakage Current
V(BR)
75
Vdc
O(VR=50Vdc)
IR 0.1 uAdc
Diode Capacitance(VR=0 f=1.0MHz)
CT
PF
RForward Voltage
VF
Vdc
(IF=1.0mAdc)
0.55 0.7
T(IF=100mAdc)
0.85 1.1
Reverse Recovery Time(IF=IR=10mAdc)
Trr
2.5 ns
ECNote:FR-5=1.0 0.75 0.
MMBD6050LT1 Datasheet
